Transistors
1
Publication date: November 2002 SJC00197CED
2SD0874, 2SD0874A (2SD874, 2SD874A)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
■ Features
• Large collector power dissipation P
C
• Low collector-emitter saturation voltage V
CE(sat)
• Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45˚
2.6
±
0.1
0.4 max.
1.6±0.2 1.5±0.1
4.0
2.5
±
0.1
3˚
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08 0.4±0.040.4±0.08
12
3
1.5±0.1
3˚
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Marking Symbol:
• 2SD0874: Z
• 2SD0874A: Y
Parameter Symbol Rating Unit
Collector-base voltage
2SD0874 V
CBO
30 V
(Emitter open)
2SD0874A 60
Collector-emitter voltage
2SD0874 V
CEO
25 V
(Base open)
2SD0874A 50
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1A
Peak collector current I
CP
1.5 A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
2SD0874 V
CBO
I
C
= 10 µA, I
E
= 030V
(Emitter open)
2SD0874A 60
Collector-emitter voltage
2SD0874 V
CEO
I
C
= 2 mA, I
B
= 025
(Base open)
2SD0874A 50
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Forward current transfer ratio
*
1
h
FE1

*
2
V
CE
= 10 V, I
C
= 500 mA 85 340 
h
FE2
V
CE
= 5 V, I
C
= 1 A 50
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.2 0.4 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.85 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 20 pF
(Common base, input open circuited)
Note)
*
: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
Note) The part numbers in the parenthesis show conventional part number.