TECHNICAL DATA

PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices Qualified Level
2N5415
2N5415S
2N5416
2N5416S




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N5415 2N5416 Units
Collector - Emitter Voltage V CEO 200 3 00 Vdc
Collector - Base Voltage V CBO 200 350 Vdc
Emitter - Base Voltage V EBO 6.0 Vdc
Collector Current I C 1.0 Adc
Total Power Dissipation @ T A = +25 0 C
@ T C = +25 0 C P T
0.75
10
W
W
Operating & Storage Temperature R ange T op , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 17.5 0 C/W
1) Derate linearly 4.28 mW/ 0 C for T A > +25 0 C
2) Derate linearly 57.1 mW/ 0 C for T C > +25 0 C

TO - 5*
2N5415 , 2N5416

2N5415S , 2N5416S
TO - 39*
(TO - 205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Cutoff Current
V CE = 150 Vdc 2N5415
V CE = 200 Vdc 2N5415
V CE = 250 Vdc 2N5416
V CE = 300 Vdc 2N5416


I CEO


50
1.0
50
1.0

µAdc
mAdc
µAdc
mAdc
Emitter - Base Cutoff Current
V EB = 6.0 Vdc I EBO 20 µAdc
Collector - Emitter Cutoff Current
V CE = 200 Vdc, V BE = 1.5 Vdc 2N5415
V CE = 300 Vdc, V BE = 1.5 Vdc 2N5416

I CEX




5 0
50
µAdc
µAdc
Collector - Base Cutoff Current
V CB = 175 Vdc 2N5415
V CB = 280 Vdc 2N5416

I CBO1

50
50

µAdc
Collector - Base Cutoff Current
V CB = 200 Vdc 2N5415
V CB = 350 Vdc 2N5416

I CBO2

500
500

µAdc

6 Lake Street, Lawrence, MA 01841
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120101
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