Philips Semiconductors Product specification
PowerMOS transistor BUK127-50GT
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in TOPFET2 technology V
DS
Continuous drain source voltage 50 V
assembled in a 3 pin surface mount
plastic package. I
D
Continuous drain current 2.1 A
APPLICATIONS P
D
Total power dissipation 1.8 W
General purpose switch for driving T
j
Continuous junction temperature 150 ˚C
lamps
motors R
DS(ON)
Drain-source on-state resistance 200 mΩ
solenoids
heaters
in automotive systems and other
applications.
FEATURES FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current trip protection
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage
and supply of overload
protection circuits
derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
4 drain (tab)
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
4
1 23
P
D
S
I
TOPFET
December 2001 1 Rev 2.000