TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices Qualified Level
2N6676 2N6678 2N6691 2N6693




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6676
2N6691
2N6678
2N6693
Unit
Collector - Emitter Voltage V C EO 300 400 Vdc
Collector - Base Voltage V CBO 450 650 Vdc
Collector - Base Voltage V CEX 450 650 Vdc
Emitter - Base Voltage V EBO 8.0 Vdc
Base Current I B 5.0 Adc
Collector Current I C 15 Adc
2N6676
2N6678
2N6691
2N6693

Total Power Dissipation @ T A = 25 0 C
@ T C = 25 0 C (1) P T
6.0 (2)
175
3.0 (3)
175
W
W
Operating & Storage Junction Temperature Range T op; T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.0 0 C/W
1) Derate linearly 1.0 W/ 0 C for T C > 25 0 C
2) Derate linearly 34.2 mW/ 0 C for T A > 25 0 C
3) Derate linearly 17.1 mW/ 0 C for T A > 25 0 C



2N6676, 2N6678
TO-3 (TO-204AA)*



2N6691, 2N6693
TO-61*
* See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N6676, 2N6691
2N6678, 2N6693

V (BR) CEO

300
400

Vdc
Collector - Emitter Cutoff Current
V CE = 450 Vdc, V BE = 1.5 Vdc 2N6676, 2N6691
V CE = 650 Vdc, V BE = 1.5 Vdc 2N6678, 2N6693

I CEX

0.1
0.1

mAdc


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