High Performance InGaAs p-i-n Photodiode
‘ST’ Active Device Mount
13PD150-ST
The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region
packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for
high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar
semiconductor design and dielectric passivation provide low noise performance. Reliability is
assured by hermetic sealing and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). The ST
receptacle is suitable for bulkhead and PC board mounting.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters Test Conditions Min Typ Max Units
Operating Voltage - - - -20 Volts
Dark Current -5V - 0.5 2.5 nA
Capacitance -5V - 1.5 2.25 pF
Responsivity 1300nm 0.7 0.8 - A/W
Rise/Fall - - - 0.5 ns
Absolute Maximum Ratings
Reverse Voltage 20 Volts
Forward Current 5 mA
Reverse Current 1 mA
Operating Temperature -40oC to + 85oC
Storage Temperature -40oC to + 85oC
Soldering Temperature 250oC
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502