Features
2-megabit
(256K x 8/
128K x 16)
Single 2.7-volt
Battery-Voltage
™
Flash Memory
AT49BV2048A
AT49LV2048A
Rev. 1914D–FLASH–03/02
• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time – 70 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Word (16K Bytes) Boot Block with Programming Lockout
– Two 4K Word (8K Bytes) Parameter Blocks
– One 112K Word (224K Bytes) Main Memory Array Block
Fast Sector Erase Time – 10 Seconds
Byte-by-byte or Word-by-word Programming – 30 µs Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
– 25mAActiveCurrent
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV/LV2048A is a 3-volt, 2-megabit Flash memory organized as 262,144
words of 8 bits each or 128K words of 16 bits each. Manufactured with Atmel’s
advanced nonvolatile CMOS technology, the device offers access times to 70 ns with
power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby
current is less than 50 µA.
The device contains a user-enabled “boot block” protection feature. The
AT49BV/LV2048A locates the boot block at lowest order addresses (“bottom boot”).
To allow for simple in-system reprogrammability, the AT49BV/LV2048A does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE,OEand WE inputs to avoid bus con-
tention. Reprogramming the AT49BV/LV2048A is performed by first erasing a block of
data and then programming on a byte-by-byte or word-by-word basis.
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
VPP VPP can be left unconnected or connected to VCC, GND, 5V or
12V. The input has no effect on the operation of the device.
I/O0 - I/O15 Data Inputs/Outputs
I/O15(A-1) I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE Selects Byte or Word Mode
NC No Connect
1