1
Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
n
Features
l Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
f
T
C
re
Z
rb
Conditions
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
C
= 1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
min
30
20
5
70
150
typ
230
1.3
max
250
1.6
60
Unit
V
V
V
MHz
pF
W
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 160 110 ~ 250