SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1984©
FEATURES
•NF 1.5 dB TYP. @ f = 1.0 GHz
•MAG 14 dB TYP. @ f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 70 mA
Total Power Dissipation PT 250 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1 µA VCB = 15 V, IE = 0
Emitter Cutoff Current IEBO 0.1 µA VEB = 2.0 V, IC = 0
DC Current Gain hFE 40 200 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product fT 4.5 GHz VCE = 10 V, IC = 20 mA
Output Capacitance Cob 0.75 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain S21e
2
91 dBVCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.5 3.0 dB VCE = 10 V, IC = 5 mA, f = 1.0 GHz
Maximum Available Gain MAG 14 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class E/P * F/Q *
Marking R2 R3
hFE 40 to 120 100 to 200 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1 −
0.05
0.4
+0.1 −
0.05
0.16
+0.1 −
0.06
0.65
+0.1
−0.15