1
Publication date: March 2003 SJC00098CED
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
30 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 030V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 02
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 1 mA 70 250 
Transition frequency f
T
V
CB
= 10 V, I
E
= −1 mA, f = 200 MHz 150 230 MHz
Reverse transfer capacitance C
re
V
CB
= 10 V, I
E
= −1 mA, f = 10.7 MHz 1.3 1.6 pF
(Common emitter)
Reverse transfer impedance Z
rb
V
CB
= 10 V, I
E
= −1 mA, f = 2 MHz 60 Ω
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Note) The part number in the parenthesis shows conventional part number.
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank B C
h
FE
70 to 160 110 to 250
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification