1MBI 300S-120
1-Pack IGBT
1200V
1x300A
IGBT MODULE ( S-Series )
a73 Features
• NPT-Technology
• Square SC SOA at 10 x I
C
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
a73 Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
a73 Outline Drawing
a73 Maximum Ratings and Characteristics a73 Equivalent Circuit
• Absolute Maximum Ratings ( T
c
=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage V
CES
1200
Gate -Emitter Voltage V
GES ± 20
V
Continuous 25°C / 80°C I
C
400 / 300
Collector 1ms 25°C / 80°C I
C PULSE
800 / 600
Current Continuous -I
C
300
1ms -I
C PULSE
600
A
Max. Power Dissipation P
C
2100 W
Operating Temperature T
j
+150
Storage Temperature T
stg -40 ∼ +125
°C
Isolation Voltage
*
1 A.C. 1min. Vis 2500 V
Mounting *
2
3.5
Terminals *
2
4.5Screw Torque
Terminals *
2
1.7
Nm
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value: Mounting 2.5 ∼ 3.5 Nm (M5) or (M6) ; Terminal 3.5 ∼ 4.5 Nm (M6), 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics ( at T
j
=25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I
CES
V
GE
=0V V
CE
=1200V 4.0 mA
Gate-Emitter Leackage Current I
GES
V
CE
=0V V
GE
=± 20V 800 nA
Gate-Emitter Threshold Voltage V
GE(th)
V
GE
=20V I
C
=300mA 5.5 7.2 8.5
T
j
= 25°C 2.3 2.6 V
Collector-Emitter Saturation Voltage V
CE(sat)
V
GE
=15V I
C
=300A
T
j
=125°C 2.8
Input Capacitance C
ies
V
GE
=0V 36’000
Output Capacitance C
oes
V
CE
=10V 7’500 pF
Reverse Transfer Capacitance C
res
f=1MHz 6’600
t
ON
V
CC
= 600V 0.35 1.2
Turn-on Time t
r,x
I
C
= 300A 0.25 0.6
t
r,i
V
GE
= ±15V 0.10
t
OFF
R
G
=2.7Ω 0.45 1.0
Turn-off Time t
f
Inductive Load 0.08 0.3
µs
T
j
= 25°C 2.3 3.0
Diode Forward On-Voltage V
F
I
F
=300A; V
GE
=0V
T
j
=125°C 2.0
V
Reverse Recovery Time t
rr
I
F
=300A 350 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R
th(j-c)
IGBT 0.06
Thermal Resistance R
th(j-c)
Diode 0.17 °C/W
R
th(c-f)
With Thermal Compound 0.0125