TECHNICAL DATA

LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices Qualified Level
2N3019
2N3019S
2N3057A 2N3700
2N3700S




JAN
JANTX
JANTXV
JANS

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector - Emitter Voltage V CEO 80 Vdc
Collector - Base Voltage V CBO 140 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Collector Current I C 1.0 Adc
Total Power Dissipation
@ T A = +25 0 C (1)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
@ T C = +25 0 C (2)
2N3019; 2 N3019S
2N3057A
2N3700
2N3700UB





P T


0.8
0.4
0.5
0.4

5.0
1.8
1.8
1.16

W




W
Operating & Storage Jct Temp Range T J , T stg - 55 to +175 0 C

1) Derate linearly 4.6 mW/ 0 C for type 2N3019 and 2N3019S; 2.3 mW/ 0 C for type 2N3057A;
2.85 mW/ 0 C for type 2N3700; 6.6 mW/ 0 C for type 2N3700UB for T A ≥ +25 0 C.
2) Derate linearly 28.6 mW/ 0 C for type 2N3019 and 2N3019S;
10.3 mW/ 0 C for types 2N3057A, 2N3700, & 2N3700UB for T C ≥ +25 0 C.


TO - 39* (TO - 205AD)
2N3019, 2N3019S


TO - 18* (TO - 206AA)
2N3700


TO - 46* (TO - 206AB)
2N3057A


3 PIN SURFACE MOUNT *
2N3700UB
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Colle ctor - Base Breakdown Voltage
I C = 100 µAdc V (BR) CBO 140 Vdc
Emitter - Base Breakdown Voltage
I E = 100 µAdc V (BR) EBO 7.0 Vdc
Collector - Emitter Breakdown Current
I C = 30 mAdc V (BR) CEO 80 Vdc
6 Lake Street, Lawrence, MA 01841
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120101
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