1
Silicon Junction FETs (Small Signal)
Publication date: July 2003 SJF00037AED
2SK3546J
Silicon N-Channel MOSFET
For switching
■ Features
• High-speed switching
• Wide frequency band
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage V
DSS
I
D
= 10 µA, V
GS
= 050 V
Drain-source cutoff current I
DSS
V
DS
= 50 V, V
GS
= 0 1.0 µA
Gate-source cutoff current I
GSS
V
GS
= ±7 V, V
DS
= 0 ±5.0 µA
Gate threshold voltage V
th
I
D
= 1.0 µA, V
DS
= 3 V 0.9 1.2 1.5 V
Drain-source ON resistance R
DS(on)
I
D
= 10 mA, V
GS
= 2.5 V 8 15 Ω
I
D
= 10 mA, V
GS
= 4.0 V 6 12
Forward transfer admittance Y
fs
 I
D
= 10 mA, V
DS
= 3 V, f = 1 kHz 20 60 mS
Short-circuit forward transfer capacitance C
iss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz 12 pF
(Common source)
Short-circuit output capacitance C
oss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz 7 pF
(Common source)
Reverse transfer capacitance C
rss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz 3 pF
(Common source)
Turn-on time
*
t
on
V
DD
= 3 V, V
GS
= 0 V to 3 V, R
L
= 470 Ω 200 ns
Turn-off time
*
t
off
V
DD
= 3 V, V
GS
= 3 V to 0 V, R
L
= 470 Ω 200 ns
Parameter Symbol Rating Unit
Drain-source voltage V
DS
50 V
Gate-source voltage (Drain open) V
GSO
±7V
Drain current I
D
100 mA
Peak drain current I
DP
200 mA
Power dissipation P
D
125 mW
Channel temperature T
ch
125 °C
Storage temperature T
stg
−55 to +125 °C
V
OUT
V
DD
= 3 V
V
GS
= 3.0 V
50 Ω
470 Ω
100
µ
F
V
IN
90%
10%
10%
90%
V
OUT
t
on
t
off
Unit: mm
1: Gate
2: Source
3: Drain
SSMini3-F1 Package
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 5F
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
:t
on
, t
off
test circuit