Transistors
1
Publication date: December 2002 SJC00285BED
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
80 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1.5 A
Peak collector current I
CP
3A
Collector power dissipation
*
P
C
600 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 080V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
=
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 40 V, I
E
= 0 0.1 µA
Forward current transfer ratio
*
h
FE
V
CE
= 2 V, I
C
= 100 mA 200 
Collector-emitter saturation voltage
*
V
CE(sat)
I
C
= 1 A, I
B
= 20 mA 350 500 mV
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 180 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 15 25 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Pulse measurement
Unit: mm
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 5H
Note)
*
: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm