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015AZ11

器件描述:TOSHIBA Diode Silicon Epitaxial Planar Type
器件厂商:TOSHIBA [Toshiba Semiconductor]
文件大小:172.86KB,共6页
Sponsor by e络盟
器件资料摘要:
015AZ2.0~015AZ12
2001-10-30 1
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ12

Constant Voltage Regulation Applications



G6cG20Small package
G6cG20Nominal voltage tolerance about ±2.5%
(2.0V~12V)



Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Power dissipation P* 150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
G2d55~125 °C
* Mounted on a glass epoxy circuit board of 20 × 20mm,
Pad dimension of 4 × 4mm.



Electrical Characteristics
(See Page 2~3)



Marking Example 1: 015AZ12-× Example 2: 015AZ12-×


Pin Assignment (top view)




Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 1-1G1A
Weight: 1.4 mg