A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 10 mA 65 V
BV
CER
I
C
= 10 mA R
BE
= 10 Ω 65 V
BV
EBO
I
E
= 1.0 mA 3.5 V
I
CES
V
CB
= 50 V 2.5 mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA 15 120 ---
P
G

η
C

V
CC
= 50 V P
OUT
= 15 W f = 1025 – 1150 MHz
P
IN
= 1.5 W
10
35
dB
%
Pulse width = 10 µSec, Duty Cycle = 1 %
NPN SILICON RF POWER TRANSISTOR
MSC1015M
DESCRIPTION:
The ASI MSC1015M is Designed for
Class C, DME/TACAN Applications up
to 1150 MHz.
FEATURES:
• Class C Operation
• P
G
= 10 dB at 15 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
1.25 A PEAK
V
CB
50 V
P
DISS
88 W PEAK
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.0 °C/W
PACKAGE STYLE .280 2L FLG

1 = Collector 2 = Emitter 3 = Base
1
2
3