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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

ASIMRAL1720-9

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:24.3KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 80 mA 42 V
BV
EBO
I
E
= 1.0 mA 3.5 V
I
CBO
V
CB
= 22 V 2.0 mA
h
FE
V
CE
= 5.0 V I
C
= 400 mA 10 100 ---
C
ob
V
CB
= 28 V f = 1.0 MHz 12 pF
G
PB
η
c

V
CE
= 22 V P
out
= 9.0 W f = 1.7 GHz & 2.0 GHz
6.5
40

dB
%

NPN SILICON RF POWER TRANSISTOR
MRAL1720-9
DESCRIPTION:
The ASI MRAL1720-9 is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications up
to 2.0 GHz.


FEATURES:
• Diffused Ballast Resistors.
• Internal Matching Network
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
4.0 A (CONT)
V
CES
42 V
V
EBO
3.5 V
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
4.5 °C/W
PACKAGE STYLE 400 4L FLG