2N5210
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5210
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
Rθ
JA
Thermal Resistance, Junction to Ambient 200 °C/W
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 50 V
V
EBO
Emitter-Base Voltage 4.5 V
I
C
Collector Current - Continuous 100 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
2N5210
C
B
E
TO-92
Discrete POWER & Signal
Technologies
 1997 Fairchild Semiconductor Corporation