SBL835
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：
datasheet@eeworld.com.cn
器件描述：Low VF Schottky Barrier Rectifiers
器件厂商：SIRECTIFIER [
Sirectifier Semiconductors]
厂商主页：http://www.sirectifier.com
文件大小：82.49KB
文件页数：2
PDF阅读：SBL835.pdf (点击阅读器件资料)
摘要：
SBL830 thru SBL845
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Dimensions TO-220AC
CA
SBL830
SBL835
SBL840
SBL845
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
A=Anode, C=Cathode, TAB=Cathode
Low VF Schottky Barrier Rectifiers
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95 C
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DC (Note 1)VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=100 C
CJ Typical Junction Capacitance (Note 2)
TSTG Storage Temperature Range
Maximum Ratings
8
200
0.55
0.5
50
450
-55 to +150
A
A
V
Unit
mA
pF
o
o
o
C
o
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Typical Thermal Resistance (Note 3) 3.0ROJC C/W
o
TJ Operating Temperature Range -55 to +125 C
o
C(TAB)
C
A
