STYN1025
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器件描述：Discrete Thyristors(SCRs)
器件厂商：SIRECTIFIER [
Sirectifier Semiconductors]
厂商主页：http://www.sirectifier.com
文件大小：183.27KB
文件页数：2
PDF阅读：STYN1025.pdf (点击阅读器件资料)
摘要：
STYN225(S) thru STYN1025(S)
Discrete Thyristors(SCRs)
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
Tc = 100°
C
25
A
IT
(AV)
Average on-state current (180° conduction angle)
Tc = 100°C 16
A
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
314
A
tp = 10 ms
300
I
?
tI
?
t Value for fusing
tp = 10 ms Tj = 25°C
450 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ? 100 ns
F = 60 Hz Tj = 125°C 50 A/?s
I
GM
Peak gate current tp = 20 ?s Tj = 125°C 4 A
P
G(AV)
Average gate power dissipation Tj = 125°C 1 W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage (for TN8 & TYN only)
5 V
Dimensions TO-263(D
2
PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
A
G
A
K
A
K
G
K
G
A
