STT253GK12
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器件描述：Thyristor-Thyristor Modules
器件厂商：SIRECTIFIER [
Sirectifier Semiconductors]
厂商主页：http://www.sirectifier.com
文件大小：256.67KB
文件页数：4
PDF阅读：STT253GK12.pdf (点击阅读器件资料)
摘要：
STT253
Thyristor-Thyristor Modules
Type
STT253GK08
STT253GK12
STT253GK14
STT253GK16
STT253GK18
VRRM
VDRM
V
800
1200
1400
1600
1800
VRSM
VDSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
TVJ=TVJM
TC=85
o
C; 180
o
sine
400
253
A
TVJ=45
o
C t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
8500
9000
7000
8000
AITSM, IFSM
TVJ=45
o
C t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
405000
336000
320000
240000
A
2
s i
2
dt
(di/dt)cr
250
800
A/us
(dv/dt)cr
TVJ=TVJM; VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
1000 V/us
PGM
TVJ=TVJM tp=30us
IT=ITAVM tp=500us
120
60
W
PGAV 20 W
ITRMS, IFRMS
ITAVM, IFAVM
o
C
TVJ
TVJM
Tstg
-40...+140
140
-40...+130
VISOL
50/60Hz, RMS t=1min
IISOL<1mA t=1s
3000
3600
V~
Md
Mounting torque (M5)
Terminal connection torque (M8)
_
2.5-5/22-44
12-15/106-132
Nm/lb.in.
Weight 430 g
TVJ=TVJM repetitive, IT=750A
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A non repetitive, IT=250A
diG/dt=1A/us
VRGM 10 V
Typical including screws
