1
Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
n
Features
l Low noise voltage NV.
l High foward current transfer ratio h
FE
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SB745
2SB745A
2SB745
2SB745A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CB
= –5V, I
E
= 2mA
I
C
= –100mA, I
B
= –10mA
V
CE
= –1V, I
C
= –100mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
min
–35
–55
–35
–55
–5
180
typ
– 0.7
150
max
–100
–1
700
– 0.6
–1
150
Unit
nA
m A
V
V
V
V
V
MHz
mV
Unit: mm
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
2SB745
2SB745A
2SB745
2SB745A
*
h
FE
Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700