Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
64 83
89 120
R
θJL
53 70
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
Drain-Source Voltage 30
I
D
6.4
5.4
30
Junction and Storage Temperature Range
A
P
D
°C
1.5
1.08
-55 to 150
T
A
=70°C
AO8800
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
July 2001
Features
V
DS
(V) = 30V
I
D
= 6.4A
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
R
DS(ON)
< 40mΩ (V
GS
= 2.5V)
R
DS(ON)
< 70mΩ (V
GS
= 1.8V)
General Description
The AO8800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. This device is
suitable for use as a uni-directional or bi-directional
load switch, facilitated by its common-drain
configuration.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D21
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
TSSOP-8
Top View
Alpha & Omega Semiconductor, Ltd.