Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
-30V
▼ Low On-resistance R
DS(ON)
50mΩ
▼ Fast Switching I
D
-6A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient
3
Max. 45 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation 2.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Storage Temperature Range
Continuous Drain Current
3
-4.8
Pulsed Drain Current
1
-20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
200708031
AP9435K
Rating
-30
-6
± 25
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness. G
D
S
D
D
S
G
SOT-223