2SD2656
Transistors
1/2
General purpose amplification (30V, 1A)
2SD2656


!Application
Low frequency amplifier


!Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ 350mV
At IC = 500mA / IB = 25mA




!External dimensions (Units : mm)
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(
3
)
0.9
0.7
0.2
0.65
(
2
)
2.01.3
(
1
)
0.65
Abbreviated symbol : EU
Each lead has same dimensions



!Absolute maximum ratings (Ta=25°C)
Parameter Symbol Unit
∗
VCBO VCollector-base voltage
VCEO VCollector-emitter voltage
VEBO VEmitter-base voltage
IC A
ICP A
Collector current
PC mWPower dissipation
Tj °CJunction temperature
Tstg
Limits
30
30
6
1
2
200
150
−55~+150 °CRange of storage temperature
∗Single pulse, PW=1ms


!Packaging specifications
2SD2656
T106
3000Type
Package
Code
Basic ordering unit (pieces)
Taping






!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
30 −− V IC=10µACollector-base breakdown voltage BVCBO
30 −− V IC=1mACollector-emitter breakdown voltage BVCEO
6 −− V IE=10µAEmitter-base breakdown voltage BVEBO
−−100 nA VCB=30VCollector cutoff current ICBO
Emitter cutoff current −−100 nA VEB=6VIEBO
− 140 350 mV IC/IB=500mA/25mACollector-emitter saturation voltage VCE(sat)
270 − 680 − VCE/IC=2V/100mADC current gain hFE
− 400 − MHz VCE=2V, IE=−100mA, f=100MHzTransition frequency fT
− 5 − pF VCB=10V, IE=0A, f=1MHzCorrector output capacitance Cob
∗
1
∗
1
∗1 Pulsed