Power Transistors
1
Publication date: April 2003 SJD00212AED
2SD1719
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer
ratio
■ Features
• High forward current transfer ratio h
FE
which has satisfactory lin-
earity
• High emitter-base voltage (Collector open) V
EBO
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
100 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
15 V
Collector current I
C
6 A
Peak collector current I
CP
12 A
Base current I
B
3 A
Collector power dissipation P
C
40 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 25 mA, I
B
= 060V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 100 V, I
E
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 15 V, I
C
= 0 100 µA
Forward current transfer ratio

*
h
FE
V
CE
= 4 V, I
C
= 1 A 300 2 000 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 5 A, I
B
= 0.1 A 0.5 V
Transition frequency f
T
V
CE
= 12 V, I
C
= 0.5 A, f = 10 MHz 30 MHz
Turn-on time t
on I
C
= 5 A
0.3 µs
Strage time t
stg
I
B1
= 0.1 A, I
B2
= − 0.1 A 1.5 µs
Fall time t
f
V
CC
= 50 V
0.6 µs
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
8.5±0.2 3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0) 1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Rank Q P
h
FE
300 to 1200 800 to 2 000
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification