BSH111
器件描述：N-channel enhancement mode field-effect transistor
器件厂商：PHILIPS [Philips Semiconductors]
文件大小：115.78KB，共13页
Sponsor by e络盟器件资料摘要：
BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002 Product data
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
a73 TrenchMOS™ technology
a73 Very fast switching
a73 Low threshold voltage
a73 Subminiature surface mount package.
3. Applications
a73 Battery management
a73 High speed switch
a73 Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23
2 source (s)
3 drain (d)
MSB003Top view
12
3
s
d
g
MBB076
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002 Product data
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
a73 TrenchMOS™ technology
a73 Very fast switching
a73 Low threshold voltage
a73 Subminiature surface mount package.
3. Applications
a73 Battery management
a73 High speed switch
a73 Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23
2 source (s)
3 drain (d)
MSB003Top view
12
3
s
d
g
MBB076