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BF1208

器件描述:Dual N-channel dual gate MOSFET
器件厂商:PHILIPS [Philips Semiconductors]
文件大小:167.98KB,共22页
Sponsor by e络盟
器件资料摘要:
1. Product profile
1.1 General description
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
1.2 Features
a73 Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
a73 Internal switch to save external components
a73 Superior cross-modulation performance during AGC
a73 High forward transfer admittance
a73 High forward transfer admittance to input capacitance ratio
1.3 Applications
a73 Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
a78 digital and analog television tuners
a78 professional communication equipment
BF1208
Dual N-channel dual gate MOSFET
Rev. 01 — 16 March 2005 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895