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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

ASIBLX65S

器件描述:NPN SILICON HIGH FREQUENCY TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:28.09KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TA = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA 16 V
BV
CES
I
C
= 50 mA 36 V
BV
EBO
I
E
= 1.0 mA 2.5 V
I
CBO
V
CB
= 15 V 1.0 mA
h
FE
V
CB
= 5.0 V I
C
= 50 mA 20 200 ---
C
OB
V
CB
= 12.5 V f = 1.0 MHz 15 pF
G
PE
η
C
V
CE
= 12.5 V P
OUT
= 2.0 W f = 470 MHz
7.0
55
dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
ASI BLX65S
DESCRIPTION
The ASI BLX65S is Designed for
12.5 V Class C Amplifier Applications
in the 100 to 500 MHz Frequency
Range.
FEATURES INCLUDE:
• Economical TO-39 Package
• 8 dB Typical Gain
• Emitter Ballasting
MAXIMUM RATINGS
I
C
750 mA
V
CBO
36 V
P
DISS
5.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
35
O
C / W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)