Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
47.5 62.5
74 110
R
θJL
37 50
Junction and Storage Temperature Range
A
P
D
°C
2
1.4
-55 to 150
T
A
=70°C
I
D
-5
-4.2
-20Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage -30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO6405
P-Channel Enhancement Mode Field Effect Transistor
Aug 2002
Features
V
DS
(V) = -30V
I
D
= -5 A
R
DS(ON)
< 52mΩ (V
GS
= -10V)
R
DS(ON)
< 87mΩ (V
GS
= -4.5V)
General Description
The AO6405 uses advanced trench technology to
provide excellent R
DS(ON)
with

low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
TSOP6
Top View
G
D
S
G
D
D
S
D
D1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.