2SK3388
2002-02-06 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3388

Switching Regulator, DC-DC Converter Applications
Motor Drive Applications



Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 82 mΩ (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 20 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (V
DS
= 250 V)
Gb7G20 Enhancement-mode: V
th
= 1.5 to 3.5 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
250 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
250 V
Gate-source voltage V
GSS
Gb120 V
DC
(Note 1)
I
D
20
Drain current
Pulse
(Note 1)
I
DP
60
A
Drain power dissipation (Tc G3d 25°C) P
D
125 W
Single pulse avalanche energy
(Note 2)
E
AS
487 mJ
Avalanche current I
AR
20 A
Repetitive avalanche energy (Note 3) E
AR
12.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.00 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
G3d 50 V, T
ch
G3d 25°C (initial), L G3d 2.06 mH, I
AR
G3d 20 A,
R
G
G3d 25 G57
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.

Unit: mm


JEDEC ―
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)

Circuit Configuration


Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
1
2
3
4