AG603-89
器件描述:InGaP HBT Gain Block
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器件资料摘要:
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Specifications and
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • We
The Communications Edge
TM
Preliminary Product Information
AG603
InGaP HBT Gain Block
Functional Diagram Product Features
• DC - 2700MHz
• +18.5 dBm P1dB at 900MHz
• +33.5 dBm OIP3 at 900MHz
• 17.6 dB Gain at 900MHz
• Single Voltage Supply
• SOT-89 SMT Package
• Internally matched to 50 Ω
Product Description
The AG603 is a general-purpose buffer amplifier that offers high
dynamic range in a low-cost surface-mount package. At 900 MHz,
the AG603 typically provides 17.6 dB of gain, +33.5 dBm Output
IP3, and +18.5 dBm P1dB. The device combines dependable
performance with consistent quality to maintain MTBF values
exceeding 100 years at mounting temperatures of +85°C and is
housed in a SOT-89 industry standard SMT package.
The AG603 consists of Darlington pair amplifiers using the high
reliability InGaP/GaAs HBT technology process technology and
only requires DC-blocking capacitors, a bias resistor, and an
inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to various
current and next generation wireless technologies such as GPRS,
GSM, CDMA, W-CDMA, and UMTS. In addition, the AG603
will work for other various applications within the DC to 2.7 GHz
frequency range such as CATV and fixed wireless.
Typical Parameters
Parameter
1
Units Typical
Frequency MHz 900 1900
S21 dB 17.6 16
S11 dB -20 -25
S22 dB -15 -15
Output P1dB dBm +18.5 +18.1
Output IP3 dBm +33.5 +32.3
Noise Figure dB 4.5 4.5
Supply Voltage V 6 6
Device Current mA 75 75
1. Data represents typical performance in an application board with
T = 25ºC, V
s
= +6 V, and R
bias
= 10 Ω in a 50 Ω system.
Ordering Information
Part No. Description
AG603-89 InGaP HBT Gain Block
SOT-89 Style Package
(Available in Tape & Reel)
AG603-89PCB Fully Assembled Application Board
Specifications
Parameters
1
Units Min Typ Max
Frequency Range MHz DC-2700
S21 - Gain dB 17.6
S11 - Input Return Loss dB -15
S22 - Output Return Loss dB -12
Output P1dB dBm +18.5
Output IP3 dBm +33.5
Noise Figure dB 4.5
Device Voltage V 4.9
Device Current mA 75
Test conditions unless otherwise noted
1. T = 25ºC, Supply Voltage = +6 V, R
bias
= 10 Ω, Frequency = 900MHz, 50 Ω System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Ratings
Parameters Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -40 to +125 °C
Operation of this device above any of there parameters may cause permanent damage
Application Circuit
AG603
C1
Blocking
Capacitor
RF OUT
L1
RF
Choke
VS = +6 V
IS = 75 mA
C3
Bypass Capacitor
C2
Blocking
Capacitor
R1
10 Ω
RF IN
RF IN GND RF OUT
GND
AG603
AG603-89
ent contains information on a new product.
information are subject to change without notice
b site: www.wj.com June 2002