1
50MT060WH
I27120 rev. D 02/03
V
CES

= 600V
V
CE(on) typ.

= 2.3V @
V
GE

= 15V, I
C

= 50A
T
C
= 25°C
"HALF-BRIDGE" IGBT MTP Warp Speed IGBT
Absolute Maximum Ratings
V
CES
Collector-to-Emitter Voltage 600 V
I
C
Continuos Collector Current @ T
C
= 25°C 114 A
@ T
C
= 109°C 50
I
CM
Pulsed Collector Current 350
I
LM
Peak Switching Current 350
I
F
Diode Continuous Forward Current @ T
C
= 109°C 34
I
FM
Peak Diode Forward Current 200
V
GE
Gate-to-Emitter Voltage ± 20 V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
P
D
Maximum Power Dissipation @ T
C
= 25°C 658 W
@ T
C
= 100°C 263
Parameters Max Units
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL E78996 approved
Features
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching,>200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Benefits
MMTP
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