2SK3471
2002-09-04 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3471

Switching Regulator and DC-DC Converter Applications


Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 10 Ω (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 0.4 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 500 V)
Gb7G20 Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
500 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
500 V
Gate-source voltage V
GSS
Gb130 V
DC (Note 1) I
D
0.5
Drain current
Pulse (Note 1) I
DP
1.5
A
Drain power dissipation P
D
0.5 W
Drain power dissipation (Note 2) P
D
1.5 W
Single pulse avalanche energy
(Note 3)
E
AS
14.3 mJ
Avalanche current I
AR
0.5 A
Repetitive avalanche energy (Note 4) E
AR
0.05 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55 to150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient R
th (ch-a)
250 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm Gb4 25.4 mm Gb4 0.8 mm)
Note 3: V
DD
G3d 90 V, T
ch
G3d 25°C (initial), L G3d 100 mH, R
G
G3d 25 G57, I
AR
G3d
0.5 A
Note 4: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.


Unit: mm


JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1B
Weight: 0.05 g (typ.)

Marking



Z G
(The two digits represent the
part number.)