2SD2674
Transistors
Rev.B 1/2
General purpose amplification (12V, 1.5A)
2SD2674


zApplication
Low frequency amplifier


zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) 200mV
at IC = 500mA / IB = 25mA
<
=





zExternal dimensions (Unit : mm)
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
TSMT3
0~0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6(2)(1)
(3)
2.9
2.8
1.9
1.6
0.950.95
0.4



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Unit
∗1
∗2
VCBO VCollector-base voltage
VCEO VCollector-emitter voltage
VEBO VEmitter-base voltage
IC A
ICP A
Collector current
PC
mW
Power dissipation
Tj °CJunction temperature
Tstg
Limits
15
12
6
1.5
3
500
W1
150
−55 to +150 °CRange of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25×25× 0.8mm Ceramic substrate
t


zPackaging specifications
2SD2674
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping







zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
15 −− V IC=10µACollector-base breakdown voltage BVCBO
12 −− V IC=1mACollector-emitter breakdown voltage BVCEO
6 −− V IE=10µAEmitter-base breakdown voltage BVEBO
−−100 nA VCB=15VCollector cutoff current ICBO
Emitter cutoff current −−100 nA VEB=6VIEBO
− 85 200 mV IC/IB=500mA/25mACollector-emitter saturation voltage VCE(sat)
270 − 680 − VCE/IC=2V/200mADC current gain hFE
− 400 − MHz VCE=2V, IE=−200mA, f=100MHzTransition frequency fT
− 12 − pF VCB=10V, IE=0A, f=1MHzCollector output capacitance Cob
∗
∗
∗ Pulsed