2SK3125
2002-08-23 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3125

DC-DC Converter, Relay Drive and
Motor Drive Applications



Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 5.3 mΩ (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 60 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 30 V)
Gb7G20 Enhancement-model: V
th
= 1.5~3.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
30 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
30 V
Gate-source voltage V
GSS
Gb120 V
DC (Note 1) I
D
70
Drain current
Pulse (Note 1) I
DP
210
A
Drain power dissipation (Tc G3d 25°C) P
D
150 W
Single pulse avalanche energy
(Note 2)
E
AS
955 mJ
Avalanche current I
AR
70 A
Repetitive avalanche energy (Note 3) E
AR
15 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
0.833 °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
G3d 25 V, T
ch
G3d 25°C, L G3d 140 G6dH, R
G
G3d 25 G57, I
AR
G3d 70 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-16H1A
Weight: 3.65 g (typ.)