2SD1759 / 2SD1861
Transistors
Rev.A 1/2
Power transistor (40V, 2A)
2SD1759 / 2SD1861


zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.


zEquivalent circuit
RBE 4kΩ
C
B
E
: Collector
: Base
: Emitter
C
B
E



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCER
VEBO
IC
PC
Tj
Tstg
Limits
40
40
5
2
1 ∗
150
−55 to +150
Unit
V
V(RBE=10kΩ)
V
A(DC)
W
1
W(TC=25°C)10
2SD1861
2SD1759
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗ Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.



zPackaging specifications and hFE
Type 2SD1759
CPT3
1k to 200k
TL
2500
2SD1861
ATV
1k to
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)


zExternal dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
2.3
0.51.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.50.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
5.1
(1) Emitter
(2) Collector
(3) Base
0.451.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1759
ROHM : CPT3
EIAJ : SC-63
2SD1861
ROHM : ATV




zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
Cob
40
40
5
−
−
−
1000
−
−
−
−
−
−
0.8
−
11
−
−
−
1
1
1.5
20000
−
V
V
V
µA
µA
V
−
pF
IC=50µA
IC=1mA , RBE=10kΩ
IE=50µA
VCB=24V
VEB=4V
IC/IB=0.6A/1.2mA
VCE/IC=3V/0.5AhFE
2SD1759
2SD1861 1000 −−
−
−
VCB=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
fT − 150 MHz VCE=6V , IE= −0.1A , f=100MHzTransition frequency
Collector-emitter saturation voltage
DC current
transfer ratio
Output capacitance