2SB0940
器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：46.39KB，共2页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: February 2003 SJD00021BED
2SB0940 (2SB940), 2SB0940A (2SB940A)
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264, 2SD1264A
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Large collector power dissipation P
C
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q P
h
FE1
60 to 140 100 to 240
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−200 V
Collector-emitter voltage
2SB0940 V
CEO
−150 V
(Base open)
2SB0940A −180
Emitter-base voltage (Collector open) V
EBO
−6V
Collector current I
C
−2A
Peak collector current I
CP
−3A
Collector power P
C
30 W
dissipation T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −50 µA, I
E
= 0 −200 V
Collector-emitter voltage
2SB0940 V
CEO
I
C
= −5 mA, I
B
= 0 −150 V
(Base open)
2SB0940A −180
Emitter-base voltage (Collector open) V
EBO
I
E
= −500 µA, I
C
= 0 −6V
Base-emitter voltage V
BE
V
CE
= −10 V, I
C
= −400 mA −1V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −200 V, I
E
= 0 −50 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −4 V, I
C
= 0 −50 µA
Forward current transfer ratio h
FE1
*
V
CE
= −10 V, I
C
= −150 mA 60 240
h
FE2
V
CE
= −10 V, I
C
= −400 mA 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA −1V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 10 MHz 30 MHz
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
1
Publication date: February 2003 SJD00021BED
2SB0940 (2SB940), 2SB0940A (2SB940A)
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264, 2SD1264A
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Large collector power dissipation P
C
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q P
h
FE1
60 to 140 100 to 240
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−200 V
Collector-emitter voltage
2SB0940 V
CEO
−150 V
(Base open)
2SB0940A −180
Emitter-base voltage (Collector open) V
EBO
−6V
Collector current I
C
−2A
Peak collector current I
CP
−3A
Collector power P
C
30 W
dissipation T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −50 µA, I
E
= 0 −200 V
Collector-emitter voltage
2SB0940 V
CEO
I
C
= −5 mA, I
B
= 0 −150 V
(Base open)
2SB0940A −180
Emitter-base voltage (Collector open) V
EBO
I
E
= −500 µA, I
C
= 0 −6V
Base-emitter voltage V
BE
V
CE
= −10 V, I
C
= −400 mA −1V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −200 V, I
E
= 0 −50 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −4 V, I
C
= 0 −50 µA
Forward current transfer ratio h
FE1
*
V
CE
= −10 V, I
C
= −150 mA 60 240
h
FE2
V
CE
= −10 V, I
C
= −400 mA 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA −1V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 10 MHz 30 MHz
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1