A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA 20 V
BV
CER
I
C
= 5.0 mA R
BE
= 10 Ω 40 V
BV
EBO
I
C
= 100 µA 3.5 V
I
CEX
V
CE
= 40 V V
BE
= -1.5 V 0.1 mA
I
EBO
V
EB
= 20 V 0.1 mA
h
FE

V
CE
= 5.0 V I
C
= 100 mA
I
C
= 380 mA
10
5.0
200
---
V
CE(SAT)
I
C
= 100 mA I
B
= 20 mA 0.5 V
f
t
V
CE
= 15 V I
C
= 50 mA f = 200 MHz 500 MHz
C
OB
V
CB
= 12 V f = 1.0 MHz 4.0 pF
P
in
η
V
CC
= 12 V f = 175 MHz
P
out
= 1.0 W

35
75 mW
%

NPN SILICON HIGH FREQUENCY TRANSISTOR
2N4427
PACKAGE STYLE TO-39


1 = EMITTER 2 = BASE
3 = COLLECTOR
DESCRIPTION:
The ASI 2N4427 is a High Frequency
Transistor Designed for Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I
C
400 mA
V
CE
20 V
P
DISS
3.5 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
50 °C/W