2SK3442
2002-08-29 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442

Switching Regulator, DC-DC Converter and
Motor Drive Applications



Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 15 mΩ (typ.)
Gb7G20 High forward transfer admittance: GefY
fs
Gef = 28 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (V
DS
= 100 V)
Gb7G20 Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
100 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
100 V
Gate-source voltage V
GSS
Gb130 V
DC (Note 1) I
D
45
Drain current
Pulse
(Note 1)
I
DP
180
A
Drain power dissipation (Tc G3d 25°C) P
D
125 W
Single pulse avalanche energy
(Note 2)
E
AS
468 mJ
Avalanche current I
AR
45 A
Repetitive avalanche energy (Note 3) E
AR
12.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.00 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2 V
DD
G3d 25 V, T
ch
G3d 25°C (initial), L G3d 373 G6dH, R
G
G3d 25 G57, I
AR
G3d 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm


JEDEC ―
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
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