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1N6508

器件描述:MONOLITHIC AIR ISOLATED DIODE ARRAY
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:24.94KB,共1页
Sponsor by e络盟
器件资料摘要:
A Microsemi Company
580 Pleasant St. Phone: 617-924-9280
Watertown, MA 02472 Fax : 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
• HERMETIC CERAMIC PACKAGE
• Bv > 60V at 10uA
• Ir < 100nA at 40V
• C < 8.0 pF
Absolute Maximum Ratings:
Symbol Parameter Limit Unit
VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc
IO *1 * 3 Continuous Forward Current 300 mAdc
IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc
PT1 *4 Power Dissipation per Junction @ 25°C 400 mW
PT2 *4 Power Dissipation per Package @ 25°C 600 mW
Top Operating Junction Temperature Range -65 to +150 °C
Tstg Storage Temperature Range -65 to +200 °C

NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Symbol Parameter Conditions Min Max Unit
Vf1 Forward Voltage If = 100mAdc *1 1 Vdc
Vf2 Forward Voltage If = 500mAdc *1 1.5 Vdc
IR1 Reverse Current VR = 40 Vdc 0.1 uAdc
Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz 8.0 pF
tfr Forward Recovery Time If = 500mAdc 40 ns
trr Reverse Recovery Time If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms 20 ns

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1019.PDF Rev - 11/25/98
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
1N6508
PACKAGE OUTLINE
1 2 14
3
5
7
8
9
11
12
4 6 10 13 NOT CONNECTED
.200
.125
.060
.015
.023
.014
.070
.030
.100
BSC
.200
MAX
.310
.220
.320
.290
.785
MAX
.005
MIN
.098
MAX
O-15 .015.008