 Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 1
1 Publication Order Number:
BC636/D
BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BC636
BC638
BC640
V
CEO
–45
–60
–80
Vdc
Collector-Base Voltage
BC636
BC638
BC640
V
CBO
–45
–60
–80
Vdc
Emitter-Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–0.5 Adc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient
R
θJA
200 °C/W
Thermal Resistance,
Junction to Case
R
θJC
83.3 °C/W
Device Package Shipping
ORDERING INFORMATION
BC636 TO–92
http://onsemi.com
CASE 29
TO–92
STYLE 14
5000 Units/Box
3
2
1
BC636ZL1 TO–92 2000/Ammo Pack
COLLECTOR
2
3
BASE
1
EMITTER
BC636–16ZL1 TO–92 2000/Ammo Pack
BC638 TO–92 5000 Units/Box
BC638ZL1 TO–92 2000/Ammo Pack
BC640 TO–92 5000 Units/Box
BC640ZL1 TO–92 2000/Ammo Pack
BC640–16 TO–92 5000 Units/Box