1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0083C0067C0045C0055C0048C0047C0083C0079C0084C0045C0051C0050C0051 C0068C0117C0097C0108 C0083C0101C0114C0105C0101C0115
C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
215 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Repetitive Peak Reverse Voltage V
RRM
70 V
Average Rectified Forward Current
(1)
(averaged over any 20 ms period)
I
F(AV)
715 mA
Repetitive Peak Forward Current I
FRM
450 mA
Non–Repetitive Peak Forward Current
t = 1.0 C0109s
t = 1.0 ms
t = 1.0 S
I
FSM
2.0
1.0
0.5
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR–5 Board,
(1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
625 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–65 to +150 °C
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
DEVICE MARKING
BAV99WT1 = A7
BAV99RWT1 = F7
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BAV99WT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0086C0057C0057C0087C0084C0049
C0066C0065C0086C0057C0057C0082C0087C0084C0049
Motorola Preferred Devices
BAV99RWT1
CASE 419–02, STYLE 10
SC–70/SOT–323
BAV99WT1
CASE 419–02, STYLE 9
SC–70/SOT–323
3
CATHODE/ANODE
ANODE
1
CATHODE
2
1
2
3
1 2
3
CATHODE/ANODE
CATHODE ANODE
 Motorola, Inc. 1996