October 2000
AS6VA5128
Intelliwatt™ active power circuitry
Industrial and commercial temperature ranges available
Organization: 524,288 words × 8 bits
2.7V to 3.3V at 55 ns
Low power consumption: ACTIVE
A1
0
A1
1
A1
2
A1
3
A1
4
A1
5
A1
6
OE
CS
circuit
A9
8 16 15 4
HA
9
A
10
A
11
A
12
A
13
A
14
Selection guide
V Range
10/6/00 ALLIANCE SEMICO
Product
CC
Min
(V)
Typ
2
(V)
Max
(V)
AS6VA5128 2.7 3.0 3.3
Power Dissipation
- 132 mW at 3.3V and 55 ns
Low power consumption: STANDBY
-66 µW max at 3.3V
Logic block diagram
Se
ns
e a
m
p
Input buffer
I/O1
I/O8
WE
Ro
w
d
e
c
o
de
r
Control
A0
A1
A2
A3
A4
A5
A6
A7
V
CC
GND
A8
Column decoder
512K × 8
Array
(4,194,304)
N
1.2V data retention
Equal access and cycle times
Easy memory expansion with CS, OE inputs
Smallest footprint packages
- 36(48)-ball FBGA
- 32-pin TSOP I and TSOP II packages are available on
Alliance AS6UB5128 product family (available January
2001)
ESD protection ≥ 2000 volts
Latch-up current ≥ 200 mA
48-CSP BGA Package (shading indicates no ball)
123456
AA
0
A
1
NC A
3
A
6
A
8
BI/O
5
A
2
WE A
4
A
7
I/O
1
CI/O
6
NC A
5
I/O
2
DV
SS
V
CC
EV
CC
V
SS
FI/O
7
A
18
A
17
I/O
3
GI/OOE CS A A I/O
®
2.7V to 3.3V 512K × 8 Intelliwatt™ low-power CMOS SRAM
Features
• AS6VA5128
Copyright ©2000 Alliance Semiconductor. All rights reserved.
DUCTOR 1
Speed
(ns)
Operating (I
CC
) Standby (I
SB1
)
Max (mA) Max (µA)
55 2 20