3P4MH
器件资料摘要：
1998©
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol 3P4MH 3P6MH Ratings Unit
Non-repetitive peak reverse voltage VRSM 500 700 V RGK = 1 kΩ
Non-repetitive peak off-state voltage VDSM 500 700 V RGK = 1 kΩ
Repetitive peak reverse voltage VRRM 400 600 V RGK = 1 kΩ
Repetitive peak off-voltage VDRM 400 600 V RGK = 1 kΩ
Average on-state current IT(AV) 3 (Tc = 87°C, Single half-wave, θ = 180°)ARefer to Figure 11.
Effective on-state current IT(RMS) 4.7 A −
Surge on-state current ITSM 65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
A Refer to Figure 2.
Fusing current ∫ it
2
dt 20 (1 ms≤t≤10 ms) A
2
s −
Critical rate of rise of on-state current dIT/dt 50 A/µs −
Peak gate power dissipation PGM 2 (f≥50 Hz, Duty≤10%) W Refer to Figure 3.
Average gate power dissipation PG(AV) 0.2 W
Peak gate forward current IFGM 1 (f≥50 Hz, Duty≤10%) A −
Peak gate reverse voltage VRGM 6V−
Junction temperature Tj −40 to +125 °C −
Storage temperature Tstg −55 tp +150 °C −
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol 3P4MH 3P6MH Ratings Unit
Non-repetitive peak reverse voltage VRSM 500 700 V RGK = 1 kΩ
Non-repetitive peak off-state voltage VDSM 500 700 V RGK = 1 kΩ
Repetitive peak reverse voltage VRRM 400 600 V RGK = 1 kΩ
Repetitive peak off-voltage VDRM 400 600 V RGK = 1 kΩ
Average on-state current IT(AV) 3 (Tc = 87°C, Single half-wave, θ = 180°)ARefer to Figure 11.
Effective on-state current IT(RMS) 4.7 A −
Surge on-state current ITSM 65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
A Refer to Figure 2.
Fusing current ∫ it
2
dt 20 (1 ms≤t≤10 ms) A
2
s −
Critical rate of rise of on-state current dIT/dt 50 A/µs −
Peak gate power dissipation PGM 2 (f≥50 Hz, Duty≤10%) W Refer to Figure 3.
Average gate power dissipation PG(AV) 0.2 W
Peak gate forward current IFGM 1 (f≥50 Hz, Duty≤10%) A −
Peak gate reverse voltage VRGM 6V−
Junction temperature Tj −40 to +125 °C −
Storage temperature Tstg −55 tp +150 °C −
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark