1
Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD814
n
Features
l High collector to emitter voltage V
CEO
.
l Low noise voltage NV.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65– 0.15 0.65– 0.15
3
1
2
0.95
0.95
1.9
–
0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4– 0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–185
–150
–185
–5
–100
–50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SB792
2SB792A
2SB792
2SB792A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current
transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –100m A, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30m A, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB,
R
g
= 100kW , Function = FLAT
min
–150
–185
–5
130
130
typ
200
4
150
max
–1
450
330
–1
Unit
m A
V
V
V
MHz
pF
mV
Marking symbol : I
(2SB792)
2F
(2SB792A)
*
h
FE
Rank classification
Rank R S T
h
FE
130 ~ 220 185 ~ 330 260 ~ 450
2SB792 IR IS IT
2SB792A 2FR 2FS —
Marking
Symbol
2SB792
2SB792A
2SB792
2SB792A