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2SB1698

器件描述:Low frequency amplifier
器件厂商:ROHM [Rohm]
厂商主页:http://www.rohm.com/
文件大小:77.75KB,共2页
Sponsor by e络盟
器件资料摘要:
2SB1698
Transistors
1/2
Low frequency amplifier
2SB1698


zApplication
Low frequency amplifier
Driver


zFeatures
1) A collector current is large.
2) VCE(sat) ≤ −370mV
at IC =−1A / IB =−50mA










zExternal dimensions (Units : mm)
Abbreviated symbol: FL
Each lead has same dimensions
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
(1)Base
(2)Collector
(3)Emitter


zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−30
−30
−6
−1.5
500
150
−55~+150
−3
∗1
Unit
V
V
V
A
A
mW
°C
°C
2 W
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 40
+
40
+
0.7(mm)CERAMIC SUBSTRATE


zPackaging specifications
2SB1698
T100
1000
Type
Package
Code
Basic ordering unit (pieces)
Taping







zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=−10V, IE=0A, f=1MHz
fT − 280 − MHz VCE=−2V, IE=100mA, f=100MHz
BVCBO −30 −−V IC=−10µA
BVCEO −30 −−V IC=−1mA
BVEBO −6 −−V IE=−10µA
ICBO −−−100 nA VCB=−30V
IEBO −−−100 nA VEB=−6V
VCE(sat) −−200 −370 mV IC=−1A, IB=−50mA
hFE 270 − 680 − VCE=−2V, IC=−100mA
Cob − 13 − pF


Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed