Rev.2.00, Dec.09.2004, page 1 of 4


2SB1691
Silicon PNP Epitaxial Planer
Low Frequency Power Amplifier
REJ03G0482-0200
(Previous ADE-208-1387A (Z))
Rev.2.00
Dec.09.2004
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: I
C
= –1 A
• Low collector to emitter saturation voltage: V
CE(sat)
= –0.3 V max.(at I
C
/I
B
= –0.5 A/–0.05 A)
• High power dissipation: P
C
= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SD2655

Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK

Note: Marking is “WL-“.

Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base Voltage V
CBO
−60 V
Collector to emitter voltage V
CEO
−50 V
Emitter to base voltage V
EBO
–6 V
Collector current I
C
–1 A
Collector peak current ic(peak) –2 A
Collector power dissipation P
C
800* mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)