2SB1180
器件描述：Silicon PNP epitaxial planar type darlington
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：102.66KB，共4页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: March 2003 SJD00056AED
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB1180 V
CEO
I
C
= −30 mA, I
B
= 0 −60 V
(Base open)
2SB1180A −80
Collector-base cutoff
2SB1180 I
CBO
V
CB
= −60 V, I
E
= 0 −100 µA
current (Emitter open)
2SB1180A V
CB
= −80 V, I
E
= 0 −100
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −7 V, I
C
= 0 −2mA
Forward current transfer ratio h
FE1
*
V
CE
= −3 V, I
C
= −4 A 2 000 10 000
h
FE2
V
CE
= −3 V, I
C
= −8 A 500
Collector-emitter saturation voltage V
CE(sat)
I
C
= −4 A, I
B
= −8 mA −1.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −4 A, I
B
= −8 mA −2V
Transition frequency f
T
V
CE
= −3 V, I
C
= −1 A, f = 1 MHz 20 MHz
Turn-on time t
on I
C
= −4 A, I
B1
= −8 mA, I
B2
= 8 mA
0.5 µs
Storage time t
stg
V
CC
= −50 V 2.0 µs
Fall time t
f
1.0 µs
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
■ Features
• High forward current transfer ratio h
FE
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
7.0±0.3
3.5±0.2
0˚ to 0.15˚
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0˚ to 0.15˚
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage
2SB1180 V
CBO
−60 V
(Emitter open)
2SB1180A −80
Collector-emitter voltage
2SB1180 V
CEO
−60 V
(Base open)
2SB1180A −80
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−8A
Peak collector current I
CP
−12 A
Collector power dissipation P
C
15 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) Self-supported type package is also prepared.
Rank Q P
h
FE1
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
1
Publication date: March 2003 SJD00056AED
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB1180 V
CEO
I
C
= −30 mA, I
B
= 0 −60 V
(Base open)
2SB1180A −80
Collector-base cutoff
2SB1180 I
CBO
V
CB
= −60 V, I
E
= 0 −100 µA
current (Emitter open)
2SB1180A V
CB
= −80 V, I
E
= 0 −100
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −7 V, I
C
= 0 −2mA
Forward current transfer ratio h
FE1
*
V
CE
= −3 V, I
C
= −4 A 2 000 10 000
h
FE2
V
CE
= −3 V, I
C
= −8 A 500
Collector-emitter saturation voltage V
CE(sat)
I
C
= −4 A, I
B
= −8 mA −1.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −4 A, I
B
= −8 mA −2V
Transition frequency f
T
V
CE
= −3 V, I
C
= −1 A, f = 1 MHz 20 MHz
Turn-on time t
on I
C
= −4 A, I
B1
= −8 mA, I
B2
= 8 mA
0.5 µs
Storage time t
stg
V
CC
= −50 V 2.0 µs
Fall time t
f
1.0 µs
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
■ Features
• High forward current transfer ratio h
FE
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
7.0±0.3
3.5±0.2
0˚ to 0.15˚
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0˚ to 0.15˚
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage
2SB1180 V
CBO
−60 V
(Emitter open)
2SB1180A −80
Collector-emitter voltage
2SB1180 V
CEO
−60 V
(Base open)
2SB1180A −80
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−8A
Peak collector current I
CP
−12 A
Collector power dissipation P
C
15 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) Self-supported type package is also prepared.
Rank Q P
h
FE1
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E