COMSET SEMICONDUCTORS 1/2
2N2646
2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point
current and valley current as well as a much higher base-one peak pulse voltage. In addition, these
devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
a low emitter leakage current and a low peak point emitter current (trigger current) are required and also
for triggering high power SCR’s.
MAXIMUM RATINGS (*)
T
J
=125°C unless otherwise noted
Symbol Ratings 2N2646 2N2647
V
B1E
Base 1 – Emitter Voltage 30 V
V
B2E
Base 2 – Emitter Voltage 30 V
I
FRMS
RMS Emitter Current 50 mA
I
EM
Emitter Peak Current 2 A
P
TOT
Total Power Dissipation 300 mW
T
J
Maximum Junction 150
T
STG
Storage Temperature Range -55 to +175
°C
ELECTRICAL CHARACTERISTICS
T
J
=25°C unless otherwise noted, R
GK
=1000Ω
2N2646 – 2N2647
Symbol Ratings
Min Max
I
EO
Emitter Reverse Current 12 µA
V
(BR)B1E
Base 1 – Emitter Breakdown Voltage
I
E
=100 µA
30 V
CASE