TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/540
Devices Qualified Level
2N6298 2N6299




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6298 2N6299 Units
Collector - Emitter Voltage V CEO 60 80 Vdc
Col lector - Base Voltage V CBO 60 80 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Base Current I B 120 mAdc
Collector Current I C 8.0 Adc
Total Power Dissipation @ T C = 0 0 C (1) @
T C = 100 0 C
P T 75
32
W
W
Operating & Storage Junction Temperature Range T OP , T STG - 6 5 to +175 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 2.33 0 C/W
1) Derate linearly 0.428 W/ 0 C above T C > 0 0 C








TO - 66* (TO - 213AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 100 mAdc 2N6298
2N6299

V (BR) CEO

60
80

Vdc
Collector - Emitter Cutoff Current
V CE = 30 Vdc 2N6298
V CE = 40 Vdc 2N6299

I CEO

0.5
0.5

mAdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc, V BE = 1.5 Vdc 2N6298
V CE = 80 Vdc, V BE = 1.5 Vdc 2N6299

I CEX

0.5
0.5

mAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc I EBO
2.0 mAdc


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